|
TGS, DTGS, ATGS, ADTGS
|
|
| Triglycine
Sulphate |
TGS
|
(NH2CH2COOH)3
H2SO4 |
| Deuterated
Triglycine Sulphate |
DTGS |
(ND2CD2COOD)3
D2SO4 |
| Doped
L-α-Alanine TGS |
ATGS
|
L-α-Ala
(NH2CH2COOH)3
H2SO4 |
| Doped
L-α-Alanine DTGS |
ADTGS
|
L-α-Ala
(ND2CD2COOD)3
D2SO4 |
Single crystals of these groups are commonly used in science and technology as materials which are sensitive to radiation in wavelengths from ultraviolet to over 300 microns.
MAIN PROPERTIES:
|
TGS |
DTGS |
ATGS |
ADTG |
| Curie temperature
Tc, °C |
49 |
57 - 59 |
49 |
56 - 58 |
Dielectric
constant ε22v at T=25°C
(f=1 kHz, Ebias =5 kV/cm) |
20 - 40 |
17 - 19 |
20 - 40 |
17-19 |
Dielectric
loss tg δ at T=25°C
(f=1 kHz, Ebias = 5 kV/cm) |
(3 - 4) x
10-3 |
(2 - 3) x
10-3 |
(3 - 4) x
10-3 |
(2 - 3) x
10-3 |
| Internal bias
E0 (T=25°C), V/cm |
< 25 |
< 25 |
1000 - 1500 |
900 |
Pyroelectric
constant γ2(dPS
/dT),
Goul x cm-2
x K-1 |
(3 - 4) x
10-8 |
(2.7 - 3) x
10-8 |
(2 - 4) x
10-8 |
3 x
10-8 |
Figures of
Merit M1 at T=25°C
(dPS/dT) x ε22-1 |
11 - 12 |
15 - 16 |
11 - 12 |
15 - 16 |
We supply as-cut blanks up to 100 x 100 x 100 mm3
as well as optical elements made upon customer's order. |
|
|
LAP and DLAP
|
|
| L-Arginine
Phosphate |
LAP |
L-Arg
H3PO4 |
| Deuterated
L-Arginine Phosphate |
DLAP |
L-Arg
D3PO4 |
APPLICATIONS:
- Second, third and fourth harmonic generation from the fundamental radiation 1.06 µm
- Sum and difference frequencies generation in wide spectral range from UV to IR
MAIN PROPERTIES:
| Transparency
range, nm |
230
- 1950 |
| Symmetry,
space group |
monoclinic,
P21 |
| Lattice
parameters, Å |
a = 10.75; b = 7.91; c = 7.32; Z = 2; ß = 98.0 |
| Mohs
hardness |
3 |
| Principal
refractive indexes: |
|
| at
1064 nm |
nx
= 1.4973; ny = 1.5590; nz
= 1.5674 |
| at
532 nm |
nx =
1.5117; ny = 1.5794; nz
= 1.5884 |
| at
355 nm |
nx =
1.5352; ny = 1.6078; nz
= 1.6211 |
| Non-linear
coefficient, pm/V |
(2 - 3) x d36(KDP) |
| Decomposition
temperature, °C |
130 |
| Optical absorption, cm-1
for LAP |
0.09
at 1064 nm, 0.01 at 532 nm |
| Optical absorption, cm-1
for DLAP |
0.02
at 1064 nm, 0.01 at 532 nm,
0.04 at 355 nm |
Optical
damage threshold, GW/cm2
outside matching, DLAP,
at 1053 nm, 23 nsec or 526 nm, 20 nsec |
>
10 |
| Chemical
properties |
hygroscopic |
LAP and DLAP single crystals are grown from aqueous solutions.
|
|
|
KAP, CsAP, RbAP, NH4AP
|
|
| Potassium
Biphthalate |
KAP
|
C6H4
(COOH) (COOK) |
| Cesium
Biphthalate |
CsAP
|
C6H4
(COOH) (COOCs) |
| Rubidium
Biphthalate |
RbAP
|
C6H4
(COOH) (COORb) |
| Ammonium
Biphthalate |
NH4AP
|
C6H4
(COOH) (COONH4) |
Alkaline Metals Biphthalate single crystals are used in x-ray spectral
analysis as analysing crystals in a long wave spectral area. The analysing
crystals serve to separate the X-radiation into spectrum. The usage
of these crystals enables a qualitative and quantitative analysis of
light elements (Fe, Al, Mg, F, Si), due to their lattice (up to 2.6
nm). The plasticity and high fissionability of these crystals facilitates
the production of fine plates (0.2 - 0.5 mm) for focusing analyzers.
Biphthalate crystals are stable in a vacuum.
By increasing the cation radius, the reflection integral coefficient
increases as well. Therefore these crystals, as for example CsAP, could
be effectively used for qualitative x-ray spectral analysis of various
materials and for overall spectra of remote astrophysical objects obtainment.
By decreasing the cation radius, the resolving capacity of the method
increases. The usage of such crystals, as for example NH4AP,
as analysing crystals in x-ray spectrometers enables substantial extension
of their resolving capacity in 0.8 - 2.5 nm.
| Crystal |
|
NH4AP |
KAP |
RbAP |
CsAP |
| Reflection surface 2d, nm |
|
(001) |
(001) |
(001) |
(001) |
| |
|
5.226 |
2.664 |
2.590 |
2.568 |
| Peak reflection coefficient
Pc, % |
Sikα,
0.712 nm |
10.0 |
5.0 |
20.0 |
20.0 |
|
Alkα,
0.834 nm |
7.5 |
12.0 |
15.0 |
17.0 |
|
Mgkα,
0.989 nm |
6.5 |
10.0 |
8.0 |
8.0 |
|
Nakα,
1.191 nm |
5.0 |
7.0 |
6.2 |
4.2 |
|
Culα,
1.336 nm |
5.4 |
5.5 |
6.0 |
6.3 |
|
Fekα,
1.831 nm |
7.6 |
2.0 |
6.0 |
6.5 |
| Reflection integral coefficient |
Sikα,
0.712 nm |
1.3 |
2.0 |
4.5 |
4.7 |
| Rc x
105 rad |
Alkα,
0.834 nm |
1.1 |
3.1 |
4.5 |
5.0 |
|
Mgkα,
0.989 nm |
1.2 |
3.3 |
4.8 |
4.8 |
|
Nakα,
1.191 nm |
1.3 |
3.8 |
4.9 |
5.7 |
|
Culα,
1.336 nm |
1.4 |
4.2 |
5.3 |
6.0 |
|
Fekα,
1.831 nm |
1.8 |
4.9 |
9.0 |
10.0 |
The sizes of the produced elements are up to 100 x 50 x 25 mm3.
Other sizes are by customer's order.
|
|
|
POM
|
|
|
Non-linear organic single crystal 3-Methyl-4-Nitropyridine-1-Oxide (C6H6O3N2.)
APPLICATIONS:
- Second harmonic generation from low-energy and diode lasers with wavelength 1.06, 1.30 and 1.55 µm fundamental radiation
- Parametric amplification and light generation in the range 0.8 - 2.0 µm
- Correlation measurement of ultra-short laser pulse duration
The experimental data evidences that POM is a promising material for a pico- and
femtosecond optics in the near IR: non-linear optical coefficient 15 times
higher that of than KDP, small phase matching hall width (5 angular min
/cm) and dispersion (0.5 angular min A).
POM is biaxial positive crystal: 2V = 69° at 532 nm.
MAIN PROPERTIES:
| Transparency
range, nm |
440 - 2300 |
| Symmetry |
orthorhombic |
| Point group |
222 |
| Lattice parameters, Å |
a = 21.359; b = 6.111;
c = 5.132 |
| Density, g/cm3 |
1.55 |
| Non-linear coefficient,
pm/V |
d = 9.7 |
| Acousto-optical properties,
MKS |
5.4 x
10-13 |
| Absorption coefficients,
cm-1 |
|
| 1064 nm |
0.05 |
| 532 nm |
0.2 |
| Refractive indexes: |
|
| at 1064 nm |
nx
= 1.625; ny = 1.663; nz
= 1.829 |
| at 532 nm |
nx
= 1.660; ny = 1.75;
nz = 1.997 |
| Conversion efficiency,
% |
20 (1.32 µm, 10 ns,
10 MW/cm2, L = 4 mm) |
|
25 (1.064 µm, 20 ns,
50 mJ) |
| Optical damage
threshold, GW/cm2 |
|
| 1060 nm, 15 ns |
2 |
| 530 nm, 15 ns |
0.075 |
| 530 nm, 25 ps |
270 |
| Chemical properties |
slightly volatile |
The sizes of the produced elements are up to 8 x 8 x 8 mm3.
Other sizes, orientation and polishing are by customer's order.
We can provide the specifications for this group of crystals as
following:
| Faces
unparallelism |
<
30 arc min |
| Flatness |
<
λ/4 at 633 nm |
| Surface
cleaness |
scratch/dig
20/10 |
| Dimension
tolerance |
0.1
mm |
|
